The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2016
Filed:
Jul. 24, 2015
Applicant:
Sandisk Technologies, Inc., Plano, TX (US);
Inventors:
Assignee:
SanDisk Technologies LLC, Plano, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/02 (2006.01); H01L 27/115 (2006.01); H01L 21/28 (2006.01); H01L 29/788 (2006.01); H01L 29/66 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11524 (2013.01); H01L 21/28273 (2013.01); H01L 29/42328 (2013.01); H01L 29/66825 (2013.01); H01L 29/788 (2013.01);
Abstract
A NAND flash memory includes a select transistor having a first region formed of a stack of layers on the substrate surface, and a second region that includes an opening through an interpoly dielectric layer, floating gate layer, and tunnel dielectric layer, the opening separated from the substrate surface by a select gate dielectric on the substrate surface, the opening filled by a control gate layer.