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For the Inventor, By the Inventor

Yokkaichi, Japan

Dai Iwata

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.2

ph-index = 2

Forward Citations = 52(Granted Patents)


Company Filing History:

goldMedal9 out of 4,519 
 
Sandisk Technologies Inc.
 patents
silverMedal1 out of 1 
 
Sandisk Technology LLC
 patent

Years Active: 2016-2024

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10 patents (USPTO):
1. 12094944 - Transistor circuits including fringeless transistors and method of making the same (2024-09-17),
2. 12027520 - Transistor circuits including fringeless transistors and method of making the same (2024-07-02),
3. 11837601 - Transistor circuits including fringeless transistors and method of making the same (2023-12-05),
4. 11626397 - Gate material-based capacitor and resistor structures and methods of forming the same (2023-04-11),
5. 11322597 - Gate material-based capacitor and resistor structures and methods of forming the same (2022-05-03),
6. 10770459 - CMOS devices containing asymmetric contact via structures (2020-09-08),
7. 10748919 - Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same (2020-08-18),
8. 9991280 - Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same (2018-06-05),
9. 9613971 - Select gates with central open areas (2017-04-04),
10. 9443862 - Select gates with select gate dielectric first (2016-09-13),

Title: The Innovative Contributions of Dai Iwata

Introduction

Dai Iwata is a prominent inventor based in Yokkaichi, Japan, known for his significant contributions to the field of transistor technology. With a total of 10 patents to his name, Iwata has made remarkable advancements that have influenced modern electronics.

Latest Patents

One of Iwata's latest patents focuses on transistor circuits that include fringeless transistors and methods for their fabrication. This innovation involves a field effect transistor that features a gate dielectric and a gate electrode positioned over an active region, which contacts a sidewall of a trench isolation structure. Notably, the transistor may be designed as a fringeless transistor, where the gate electrode does not overlie a portion of the trench isolation region. Additionally, a planar dielectric spacer plate and a conductive gate cap structure may be incorporated to enhance the device's performance. Another aspect of his patent describes a first field effect transistor that contains an active region with a source region, a drain region, and a channel region, along with a second field effect transistor that shares similar characteristics but differs in the presence of a fringe region.

Career Highlights

Throughout his career, Dai Iwata has worked with notable companies such as SanDisk Technologies Inc. and SanDisk Technology LLC. His work in these organizations has allowed him to develop and refine his innovative ideas in the field of electronics.

Collaborations

Iwata has collaborated with esteemed colleagues, including Hiroyuki Ogawa and Kazutaka Yoshizawa, contributing to a dynamic exchange of ideas and advancements in technology.

Conclusion

Dai Iwata's contributions to transistor technology exemplify the spirit of innovation and creativity in the field of electronics. His patents and collaborations have paved the way for future advancements, solidifying his legacy as a significant inventor.

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