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For the Inventor, By the Inventor

Yokkaichi, Japan

Kazutaka Yoshizawa

USPTO Granted Patents = 12 

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 107(Granted Patents)


Location History:

  • Yokkaichi, JP (2016 - 2021)
  • Kuwana, JP (2016 - 2024)

Company Filing History:

goldMedal11 out of 4,564 
 
Sandisk Technologies Inc.
 patents
silverMedal1 out of 1 
 
Sandisk Technology LLC
 patent

Years Active: 2016-2025

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12 patents (USPTO):Explore Patents
1. 12457786 - High voltage field effect transistors with different sidewall spacer configurations and method of making the same (2025-10-28),
2. 12356704 - Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the same (2025-07-08),
3. 12032837 - Non-volatile memory with reduced word line switch area (2024-07-09),
4. 11088152 - Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same (2021-08-10),
5. 10748919 - Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same (2020-08-18),
6. 10714486 - Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same (2020-07-14),
7. 10355100 - Field effect transistors having different stress control liners and method of making the same (2019-07-16),
8. 10290645 - Three-dimensional memory device containing hydrogen diffusion barrier layer for CMOS under array architecture and method of making thereof (2019-05-14),
9. 9991280 - Multi-tier three-dimensional memory devices containing annular dielectric spacers within memory openings and methods of making the same (2018-06-05),
10. 9595535 - Integration of word line switches with word line contact via structures (2017-03-14),
11. 9443862 - Select gates with select gate dielectric first (2016-09-13),
12. 9281314 - Non-volatile storage having oxide/nitride sidewall (2016-03-08),

Title: The Innovations of Kazutaka Yoshizawa

Introduction

Kazutaka Yoshizawa is a distinguished inventor hailing from Yokkaichi, Japan. With an impressive portfolio of 11 patents, he has made significant contributions to the fields of electronics and semiconductor technology. His work, particularly in transistors and non-volatile memory systems, showcases his expertise and innovation.

Latest Patents

Yoshizawa's latest patents include a unique field-effect transistor that features a contact via structure positioned laterally by a sub-lithographic distance. This advancement involves a design where a first and second active region are separated by a semiconductor channel, along with a gate stack structure. The system ensures optimal placement of connection lines and vias to enhance performance.

Another notable invention is a three-dimensional non-volatile memory structure designed to reduce the word line switch area. This innovative design incorporates word lines linked to non-volatile memory cells arranged in blocks. The word line switches are organized in groups and strategically placed under the memory blocks, allowing for efficient handling of voltage differences while minimizing space.

Career Highlights

Throughout his career, Kazutaka Yoshizawa has played significant roles in renowned companies such as SanDisk Technologies Inc. and SanDisk Technology LLC. His contributions to these organizations reflect his dedication to advancing technology and developing groundbreaking inventions.

Collaborations

Yoshizawa has collaborated with notable professionals in his field, including Hiroyuki Ogawa and Dai Iwata. These partnerships have facilitated the exchange of ideas and fostered innovation within the semiconductor industry.

Conclusion

Kazutaka Yoshizawa stands out as a prominent inventor whose work has significantly impacted the realm of electronics and semiconductor technologies. His 11 patents illustrate his remarkable ingenuity and commitment to advancing modern technology. As he continues to innovate and inspire, his contributions will undoubtedly influence future developments in the industry.

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