The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
May. 29, 2020
Sandisk Technologies Llc, Addison, TX (US);
Hiroshi Nakatsuji, Yokkaichi, JP;
Yasuyuki Aoki, Yokkaichi, JP;
Shigeki Shimomura, Yokkaichi, JP;
Akira Inoue, Yokkaichi, JP;
Kazutaka Yoshizawa, Yokkaichi, JP;
Hiroyuki Ogawa, Nagoya, JP;
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
Field effect transistors for an SRAM cell can be formed employing n-doped gate electrode portions for p-type pull-up transistors. The SRAM cell includes a first series connection of a first p-type pull-up transistor and a first n-type pull-down transistor located between a power supply source and electrical ground, and a second series connection of a second p-type pull-up transistor and a second n-type pull-down transistor located between the power supply source and the electrical ground. Each gate electrode of the SRAM cell can include a respective n-doped gate electrode portion.