Yokohama, Japan

Akira Inoue

This inventor holds 47 USPTO granted patents and 1 EPO patent, primarily in Optical Devices. Top assignees: Sumitomo Electric Industries, Limited, Nippon Oil Company, Nippon Telegraph and Telephone Corporation. Active years: 1984-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Akira Inoue. Retrieved from https://idiyas.com/inventor/akira-inoue-ma7zrjlu

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 76.6


Average Co-Inventor Count = 3.7

ph-index = 13

Forward Citations = 503(Granted Patents)


Location History:

  • Kanagawa, JP (1989 - 1994)
  • Yokohama, JP (1986 - 2018)
  • Yokkaichi, JP (2020 - 2021)
  • Yokosuka, JP (2021)
  • Kawasaki, JP (1984 - 2022)

Company Filing History:


Years Active: 1984-2022

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Areas of Expertise:
Optical Multiplexer
Diffraction Grating
Waveguide
Fiber Grating
Laser Processing
Optical Communication
Power Monitoring
Optical Coupling
Memory Devices
Transistor Manufacturing
Optical Connector
UI Expansion
47 patents (USPTO):Explore Patents

Title: Akira Inoue: Innovator in Semiconductor Technology

Introduction

Akira Inoue, based in Yokohama, Japan, is a prolific inventor with an impressive portfolio of 47 patents. His contributions to the field of semiconductor technology have made significant advancements in memory devices and transistor designs, positioning him as a key figure in innovation within this sphere.

Latest Patents

Inoue's latest patents include innovative designs such as "Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same." This patent describes a semiconductor structure that incorporates a first-conductivity-type well in a semiconductor substrate, alongside a first transistor and a cutoff gate electrode, enhancing the functionality of memory devices.

Another notable patent is for a "Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same." This invention details the formation of field-effect transistors for SRAM cells using n-doped gate electrode portions, optimizing performance and efficiency in memory technology.

Career Highlights

Inoue has held significant positions in various reputable companies, including Sumitomo Electric Industries and Nippon Oil Company. His work within these organizations has facilitated the development of groundbreaking technologies that centralize around semiconductor advancements.

Collaborations

Throughout his career, Inoue has collaborated with esteemed colleagues, such as Masakazu Shigehara and Toru Iwashima. These partnerships have fostered innovative ideas and approaches, contributing to the success of numerous projects and patents in the semiconductor industry.

Conclusion

Akira Inoue remains a vital contributor to technological advancements in semiconductor technology. His 47 patents, collaborations, and career experiences underline his role as an influential inventor. Through his innovative designs and dedication, Inoue continues to shape the future of memory devices and transistor systems.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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