Sumitomo Electric Industries, Limited

Nippon Oil Company

Nippon Telegraph and Telephone Corporation

Sandisk Technologies Inc.

Nissan Motor Company Limited

Petroleum Energy Center Foundation

Akira Inoue

Masakazu Shigehara

Toru Iwashima

Shinji Ishikawa

Tomomi Sano

Michiko Takushima

Kenichiro Takahashi

Ken Hashimoto

Masumi Ito

Masaki Ohmura

Michiko Harumoto

Toshikazu Shibata

Yasuo Sekido

Yasuji Hattori

Yasuyuki Oishi

Masao Mori

Tatsuki Kubo

Shinji Takase

Hiroyuki Ogawa

Hiroshi Suganuma

Makoto Katayama

Masayuki Shigematsu

Manabu Shiozaki

Takayuki Shimazu

Hiroshi Kohda

Haruhiko Aikawa

Hitoshi Hatayama

Koji Nakazato

Kazutaka Yoshizawa

Hiroshi Nakatsuji

Eiichiro Yamada

Kiyotaka Murashima

Yutaka Katsuyama

Shigeki Shimomura

Yasuyuki Aoki

Fumio Ohtsuki

Katsuya Yamashita

Maki Inai

Yoshitomo Iyoda

Atsushi Inoue

Eisuke Sasaoka

Yuji Kobayashi

Fumiaki Toyama

Takeshi Masuda

Masatoshi Nishikawa

Takemi Hasegawa

Yoichi Ishiguro

Kazuhito Saito

Ichiro Tsuchiya

Toshio Danzuka

Kohei Kobayashi

Mitsuaki Tamura

Motonori Nakamura

Masaru Ushio

Masayuki Hiroi

Dai Sasaki

Toshiki Taru

Yoshiaki Terasawa

Tomohiko Kanie

Nobuhisa Jingu

Kaoru Okuno

Kazumasa Oishi

Takeo Komiya

Toru Morita

Sayaka Yagi

Yoshiaki Miyajima

Akinobu Moriyama

Kunio Awazu

Keisuke Satou

Kentaro Kono

Shin-ichi Furukawa

Takatada Usami

Masato Odashima

Hisao Sakoda

Takuma Takimoto

Toshinori Wakami

Kenichi Nishikawa

Hiroyuki Adachi

Shuji Shinoki

Tatuo Omata

Yoshihiro Yamazaki

Ken Kawakatsu

Masahiro Haruyama

Toshihiro Kushibiki

Michiko Takushima (nee Harumoto)

A semiconductor structure includes a first-conductivity-type well located in a semiconductor substrate, a semiconductor active area region located adjacent to the a first-conductivity-type well, a first transistor including a source region, a drain region, a channel region located between the source region and the drain region, a gate dielectric layer located over the channel region and a gate electrode located over the gate dielectric layer, such that the transistor is located on the semiconductor active area region, and a cutoff gate electrode located over the semiconductor active area region, and between the first transistor and the first-conductivity-type well.

Cutoff gate electrodes for switches for a three-dimensional memory device and method of making the same

Field effect transistors for an SRAM cell can be formed employing n-doped gate electrode portions for p-type pull-up transistors. The SRAM cell includes a first series connection of a first p-type pull-up transistor and a first n-type pull-down transistor located between a power supply source and electrical ground, and a second series connection of a second p-type pull-up transistor and a second n-type pull-down transistor located between the power supply source and the electrical ground. Each gate electrode of the SRAM cell can include a respective n-doped gate electrode portion.

Static random access memory cell employing n-doped PFET gate electrodes and methods of manufacturing the same

A part specifying unit causes a web browser to display a part specification GUI that enables to specify settings relating to a display mode of a part constituting a web page, and accepts specification of settings relating to a display mode through the part specification GUI. Moreover, an action specifying unit causes the web browser to display an action specification GUI that enables to specify settings relating to an action of a part constituting a web page, and accepts specification of settings relating to an action through the action specification GUI. An expanding unit expands the web page based on the settings relating to the display mode accepted by the part specifying unit, and on the settings relating to the action accepted by the action specifying unit, and displays the expanded web page on the web browser.

Terminal device, UI expansion method, and UI expansion program

A field effect transistor having a higher breakdown voltage can be provided by forming a contiguous dielectric material layer over gate stacks, forming via cavities laterally spaced from the gate stacks, selectively depositing a single crystalline semiconductor material, and converting upper portions of the deposited single crystalline semiconductor material into elevated source/drain regions. Lower portions of the selectively deposited single crystalline semiconductor material in the via cavities can have a doping of a lesser concentration, thereby effectively increasing the distance between two steep junctions at edges of a source region and a drain region. Optionally, embedded active regions for additional devices can be formed prior to formation of the contiguous dielectric material layer. Raised active regions contacting a top surface of a substrate can be formed simultaneously with formation of the elevated active regions that are vertically spaced from the top surface.

Field effect transistor with elevated active regions and methods of manufacturing the same

The present invention relates to an optical coupling element to optically couple optical elements of different kinds to each other, which is provided with a plurality of cores. In the optical coupling element a first end and a second end opposed thereto are different in at least either of a core array and a core interval. The optical coupling element has a bent shape of at least a part of the optical coupling element itself including the cores, so that a light input/output direction at the first end is different from a light input/output direction at the second end.

Optical coupling element and manufacturing method

An optical device which reduces coupling loss while improving practicality is provided. A multi-core fiber coupling device is an optical device which couples a multi-core fiber to single core fibers, and includes a first optical system which is located on optical axes of a plurality of beams emitted from the multi-core fiber, and which makes the optical axes of the respective beams non-parallel to each other, thereby making the beams in a state of being separated from each other, and a second optical system Swhich makes the optical axes of the plurality of beams in a state of being non-parallel to each other on the side of the first optical system, in a state of being approximately parallel to each other.

Optical device

A fuel gas supply device for supplying fuel gas to a fuel cell stack includes a control valve provided in a fuel gas path connecting a fuel tank and the fuel cell stack, an upstream-side pressure sensor and a downstream-side pressure sensor for detecting an upstream-side pressure and a downstream-side pressure, and a programmable controller. The programmable controller calculates a required opening based on a target fuel gas pressure and the downstream-side pressure and calculates an opening time and a closing time based on the required opening and the upstream-side pressure, or calculates an opening time and a closing time based on the target fuel gas pressure and the downstream-side pressure and calculates a required opening based on the opening time and the upstream-side pressure, and controls the control valve using the calculated required opening, opening time and closing time.

Fuel gas supply device of fuel cell system

An optical connecting member realizes an optical connecting between a multi-core fiber and a plurality of single-core fibers by a waveguide part which connects a first end face and a second end face. With the optical connecting member, a connected end which is connected to the first end face is a straight-line portion that is orthogonal to the first end face in each of the plurality of waveguide parts. In addition, a diverged end which is diverged to the second end face is a straight-line portion that is orthogonal to the second end face. Consequently, light that has passed through the waveguide parts is emitted from the first end face and the second end face substantially perpendicularly to the faces, thereby enabling optical connecting loss to be favorably inhibited.

Optical connector, optical connecting structure and method of manufacturing optical connector

A laser processing apparatusincludes a processing light sourceemitting processing light; an observation light emitting unitemitting observation light; optical fibersconducting light having a plurality of wavelengths generated at an electronic component; a detecting unitdetecting the light conducted by the optical fibers; and a control unitcontrolling a light emitting state of the processing light emitting unit. The optical fibersare categorized into four groups, and disposed so as to surround an optical fiberconducting the processing light. The optical fiberscategorized into the four groups are capable of conducting the observation light to the electronic componentevery group.

Laser processing apparatus and processing method employed therein

An optical combiner in which fewer parts are used comprises an optical component and a plastic body. The component comprises: a first filter reflecting first light having a first wavelength and being transparent to second light having a second wavelength and third light having a third wavelength; a second filter reflecting second light and being transparent to third light; and a base transparent to second light and third light. The first filter and the second filter are provided on opposed surfaces of the base. The plastic body has first, second, and third surfaces, and the first surface provides first, second, and third lenses. The component is provided in the plastic body such that light from the first lens is connected to a path to the second surface through the first filter and light from the second lens is connected to the path through the second filter. The third surface is a reflecting surface for connecting light from the third lens to the path.

Optical combiner and image projector using the optical combiner

A metal heating apparatus according to an embodiment of the present invention comprises a light output portion for outputting light having a center wavelength in a wavelength range of 200 nm to 600 nm.

Metal heating apparatus, metal heating method, and light source apparatus

An optical combiner in which the number of parts used is lessened is made of a resin. The optical component comprises a first surface, a diffraction grating, and a second surface. The first surface is a surface providing first, second, and third lenses. The diffraction grating diffracts to a common optical path leading to the second surface light of the first wavelength incident on the first lens, light of the second wavelength incident on the second lens, and light of the third wavelength incident on the third lens. The second surface emits light incident thereon through the common optical path. The optical path from the first surface to the diffraction grating and the common optical path are constituted of the resin.

The invention offers a technique that selectively differentiation-induces mesenchymal stem cells, which can differentiate to cells that constitute various tissues and organs, to osteoblasts. In addition, the invention offers a technique that differentiation-induces mesenchymal stem cells to osteoblasts with a simple operation that needs only short time and that is noninvasive. The inventors have found that the switch for the differentiation induction to osteoblasts is turned on by translocating biological clock-relevant factors existing in mesenchymal stem cells from the cells' cytoplasm to the cells' nucleus. The inventors have also found that the switch can be turned on by irradiating the cells for a short time with a lightwave having a specific wavelength that is noninvasive.

Method of differentiation induction to osteoblasts

The optical multiplexer/demultiplexerincludes a memberon which optical waveguidestoand a grooveare formed and an optical filterinserted in the groove. The memberis a planar optical waveguide where the optical waveguidestoare formed on one surface thereof, and the grooveis formed thereon. Before the grooveis formed, the optical wave guideand the optical waveguideare a continuous optical waveguide; and the optical waveguideand the optical waveguideare a continuous optical waveguide. A straight grooveis formed so as to go through an intersecting point of the two continuous optical waveguides. The optical waveguidesandare formed straightly on the member

Optical multiplexer/demultiplexer and optical communication system

Growing community of inventors

Yokohama, Japan

Akira Inoue