The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 08, 2025

Filed:

Aug. 22, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Kouta Onogi, Yokkaichi, JP;

Kazutaka Yoshizawa, Yokkaichi, JP;

Hokuto Kodate, Yokkaichi, JP;

Mitsuhiro Togo, Yokkaichi, JP;

Takahito Fujita, Yokkaichi, JP;

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10D 84/03 (2025.01); H01L 21/265 (2006.01); H01L 21/266 (2006.01); H01L 21/28 (2025.01); H01L 21/285 (2006.01); H01L 21/768 (2006.01); H01L 23/535 (2006.01); H10D 64/62 (2025.01); H10D 64/66 (2025.01); H10D 84/01 (2025.01); H10D 84/83 (2025.01);
U.S. Cl.
CPC ...
H10D 84/038 (2025.01); H01L 21/26513 (2013.01); H01L 21/266 (2013.01); H01L 21/28052 (2013.01); H01L 21/28518 (2013.01); H01L 21/76805 (2013.01); H01L 21/76895 (2013.01); H01L 23/535 (2013.01); H10D 64/62 (2025.01); H10D 64/663 (2025.01); H10D 84/0133 (2025.01); H10D 84/0137 (2025.01); H10D 84/0149 (2025.01); H10D 84/83 (2025.01);
Abstract

A transistor includes a first active region and a second active region separated by a semiconductor channel, a gate stack structure including a gate dielectric and a gate electrode overlying the semiconductor channel, a gate contact via structure overlying and electrically connected to the gate electrode and having a top surface located in a first horizontal plane, a first active-region contact via structure overlying and electrically connected to the first active region, and having a top surface located within a second horizontal plane that underlies the first horizontal plane, a first connection line structure contacting a top surface of the first active-region contact via structure, and a first connection via structure contacting a top surface of the first connection line structure and having a top surface within the first horizontal plane.


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