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For the Inventor, By the Inventor

Yokkaichi, Japan

Mitsuhiro Togo

USPTO Granted Patents = 10 

Average Co-Inventor Count = 2.3

ph-index = 2

Forward Citations = 7(Granted Patents)


Company Filing History:

goldMedal10 out of 4,564 
 
Sandisk Technologies Inc.
 patents

Years Active: 2022-2025

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10 patents (USPTO):Explore Patents
1. 12356704 - Field effect transistor with contact via structures that are laterally spaced by a sub-lithographic distance and method of making the same (2025-07-08),
2. 12279445 - Field effect transistors with gate fins and method of making the same (2025-04-14),
3. 12015084 - Field effect transistors with gate fins and method of making the same (2024-06-18),
4. 11978774 - High voltage field effect transistor with vertical current paths and method of making the same (2024-05-07),
5. 11967626 - Field effect transistors with gate fins and method of making the same (2024-04-23),
6. 11837640 - Transistors with stepped contact via structures and methods of forming the same (2023-12-05),
7. 11626397 - Gate material-based capacitor and resistor structures and methods of forming the same (2023-04-11),
8. 11575015 - High voltage field effect transistors with self-aligned silicide contacts and methods for making the same (2023-02-07),
9. 11450768 - High voltage field effect transistor with vertical current paths and method of making the same (2022-09-20),
10. 11322597 - Gate material-based capacitor and resistor structures and methods of forming the same (2022-05-03),

Title: Innovator Profile: Mitsuhiro Togo

Introduction: Mitsuhiro Togo is an accomplished inventor based in Yokkaichi, Japan, known for his significant contributions to the field of semiconductor technology. With a total of 12 patents to his name, Togo has made advancements that play a crucial role in the development of modern electronic devices.

Latest Patents: Among his latest inventions is a patent for "Field Effect Transistors with Gate Fins and Method of Making the Same." This innovation features a semiconductor structure that includes a semiconductor substrate with a shallow trench isolation structure surrounding a transistor active region. It encompasses at least one line trench extending vertically into the substrate, creating a source and drain region in the active area. A contoured channel region connects the source to the drain beneath the line trench, while a gate dielectric encompasses all surfaces, ensuring optimal performance and reliability.

Another notable patent also relates to the "Field Effect Transistors with Gate Fins and Method of Making the Same." This design includes at least one line trench that extends from the top surface of a channel region, with a gate dielectric that efficiently contacts all surfaces, enhancing transistor functionality. These innovations reflect Togo's commitment to pushing the boundaries of semiconductor technologies.

Career Highlights: Mitsuhiro Togo's work at SanDisk Technologies, Inc. has been marked by his dedication to innovation. His extensive research and development efforts have enhanced the capabilities of semiconductor structures, making significant impacts on the electronics industry. Throughout his career, Togo has been recognized for his technical expertise and inventive spirit.

Collaborations: In his pursuits, Mitsuhiro Togo has collaborated with talented individuals such as Srinivas Pulugurtha and Yanli Zhang. These partnerships have fostered an environment of innovation and creative problem-solving, resulting in groundbreaking advancements in semiconductor technology.

Conclusion: Mitsuhiro Togo's contributions to the field of semiconductors underscore his position as a leading inventor in the industry. With a strong portfolio of patents, innovative designs, and fruitful collaborations, Togo continues to influence the future of technology, reflecting the spirit of innovation that drives progress in electronics.

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