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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11967626 B1

PDFFull Text
Date of Patent:
Apr. 23, 2024

Filed:

Sep. 14, 2021

Field effect transistors with gate fins and method of making the same

Applicant:

Sandisk Technologies Llc, San Jose, CA (US);

Inventors:

Mitsuhiro Togo, Yokkaichi, JP;

Takashi Kobayashi, Yokkaichi, JP;

Sudarshan Narayanan, San Jose, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

THE MARBURY LAW GROUP PLLC

Primary Examiner:

Reema Patel

Int. Cl.
CPC ...
H01L 29/00 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H10B 41/41 (2023.01); H10B 43/40 (2023.01);
U.S. Cl.
CPC ...
H01L 29/4236 (2013.01); H01L 21/30608 (2013.01); H01L 21/308 (2013.01); H01L 29/401 (2013.01); H01L 29/42376 (2013.01); H10B 41/41 (2023.02); H10B 43/40 (2023.02);
Abstract

A field effect transistor includes at least one line trench extending downward from a top surface of a channel region which laterally surrounds or underlies the at least one line trench, a gate dielectric contacting all surfaces of the at least one line trench and including a planar gate dielectric portion that extends over an entirety of a top surface of the channel region, a gate electrode, a source region, and a drain region.

Find Patent Forward Citations

Togo, Mitsuhiro. (2024). Field effect transistors with gate fins and method of making the same (U.S. Patent No. 11967626). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11967626

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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