The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 08, 2016
Filed:
Oct. 10, 2014
Sandisk Technologies Inc., Plano, TX (US);
Takashi Kashimura, Yokkaichi, JP;
Xiaolong Hu, Yokkaichi, JP;
Sayako Nagamine, Yokkaichi, JP;
Yusuke Yoshida, Yokkaichi, JP;
Hiroaki Iuchi, Nagoya, JP;
Akira Nakada, Yokkaichi, JP;
Kazutaka Yoshizawa, Kuwana, JP;
SanDisk Technologies Inc., Plano, TX (US);
Abstract
Non-volatile storage devices and methods for fabricating non-volatile storage device are described. Sidewalls of the memory cells and their associated word line may be covered with silicon oxide. Silicon nitride covers the silicon oxide adjacent to the word lines, which may provide protection for the word lines during fabrication. However, silicon nitride can trap charges, which can degrade operation if the trapped charges are near a charge trapping region of a memory cell. Thus, the silicon nitride does not cover the silicon oxide adjacent to charge storage regions of the memory cells, which can improve device operation. For example, memory cell current may be increased. Techniques for forming such a device are also disclosed. One aspect includes a method that uses a sacrificial material to control formation of a silicon nitride layer when forming a memory device.