IDiyas

For the Inventor, By the Inventor

Yokkaichi, Japan

Sayako Nagamine

USPTO Granted Patents = 10 

Average Co-Inventor Count = 4.8

ph-index = 4

Forward Citations = 60(Granted Patents)


Company Filing History:

goldMedal10 out of 4,519 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2023

Loading Chart...
10 patents (USPTO):
1. 11581049 - System and methods for programming nonvolatile memory having partial select gate drains (2023-02-14),
2. 11417621 - Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same (2022-08-16),
3. RE49165 - On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same (2022-08-08),
4. 11121149 - Three-dimensional memory device containing direct contact drain-select-level semiconductor channel portions and methods of making the same (2021-09-14),
5. 10957680 - Semiconductor die stacking using vertical interconnection by through-dielectric via structures and methods for making the same (2021-03-23),
6. 10943917 - Three-dimensional memory device with drain-select-level isolation structures and method of making the same (2021-03-09),
7. 10403639 - Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same (2019-09-03),
8. 10297610 - Three-dimensional memory device having on-pitch drain select gate electrodes and method of making the same (2019-05-21),
9. 10236300 - On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same (2019-03-19),
10. 9281314 - Non-volatile storage having oxide/nitride sidewall (2016-03-08),

Title: Sayako Nagamine: Innovator in Nonvolatile Memory Technologies

Introduction

Sayako Nagamine, an accomplished inventor based in Yokkaichi, Japan, has made significant contributions to the field of nonvolatile memory technologies. With a remarkable portfolio of ten patents, her work has paved the way for advancements in memory systems that are crucial for modern electronics.

Latest Patents

Nagamine's latest patents include innovative methods and systems aimed at enhancing the efficiency of programming nonvolatile memory. One of her notable inventions is a system and methods for programming nonvolatile memory having partial select gate drains. This invention includes apparatus and methods designed to reduce program disturb within a memory string that features a partial select gate drain; this design is innovatively cut by a shallow trench. The invention manages the bias voltage applied to the select gates, ensuring minimal disturbance during high data states.

Another significant patent focuses on the memory die configuration with the source side of a three-dimensional memory array bonded to a logic die. This patent describes a memory die layered with insulating and conductive materials, creating memory openings that ensure optimal functionality while reducing fabrication complexity.

Career Highlights

Sayako Nagamine is currently employed at SanDisk Technologies Inc., where she continues to push the boundaries of memory technology. Her role at the company has allowed her to focus on groundbreaking research and development projects, directly influencing the evolution of memory manufacturing and quality.

Collaborations

Throughout her career, Nagamine has collaborated with prominent colleagues, including Shinsuke Yada and Masanori Tsutsumi. These partnerships have fostered a collaborative environment, where innovative ideas are exchanged to develop cutting-edge solutions in memory technology.

Conclusion

In conclusion, Sayako Nagamine stands out as a leading figure in the field of nonvolatile memory innovations. Her extensive patent portfolio reflects her dedication to advancing technology and her ability to address complex challenges within the electronics industry. As she continues to innovate, Nagamine contributes significantly not only to her company but to the future of memory technologies.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…