Company Filing History:

10 out of 4,538

Sandisk Technologies Inc.

Years Active: 2014-2017

Loading Chart...

12 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9837431 - 3D semicircular vertical NAND string with recessed inactive semiconductor channel sections (2017-12-05),

2. 9818798 - Vertical thin film transistors in non-volatile storage systems (2017-11-14),

3. 9728499 - Set of stepped surfaces formation for a multilevel interconnect structure (2017-08-08),

4. 9691778 - Multiheight contact via structures for a multilevel interconnect structure (2017-06-27),

5. 9601508 - Blocking oxide in memory opening integration scheme for three-dimensional memory structure (2017-03-21),

6. 9401309 - Multiheight contact via structures for a multilevel interconnect structure (2016-07-26),

7. 9362338 - Vertical thin film transistors in non-volatile storage systems (2016-06-07),

8. 9281314 - Non-volatile storage having oxide/nitride sidewall (2016-03-08),

9. 9236392 - Multiheight electrically conductive via contacts for a multilevel interconnect structure (2016-01-12),

10. 9123577 - Air gap isolation in non-volatile memory using sacrificial films (2015-09-01),

11. 8937011 - Method of forming crack free gap fill (2015-01-20),

12. 8802561 - Method of inhibiting wire collapse (2014-08-12),

Title: The Innovative Mind of Hiroaki Iuchi

Introduction

Hiroaki Iuchi, an accomplished inventor based in Nagoya, Japan, has made significant contributions to the field of non-volatile memory technology. With a total of 12 patents to his name, his work continues to push the boundaries of innovation and design in the realm of semiconductor devices.

Latest Patents

Among Iuchi's most recent inventions is the patent for a 3D semicircular vertical NAND string with recessed inactive semiconductor channel sections. This innovative vertical memory device incorporates dual memory cells per level in each memory opening, featuring dielectric separator structures that enhance control over the threshold voltage. The design minimizes the fringe field from control gate electrodes, improving performance and efficiency.

Another notable patent involves vertical thin film transistors in non-volatile storage systems. This patent describes a three-dimensional (3D) memory array that utilizes vertically-oriented thin film transistors as selection devices. Iuchi's method of fabricating these devices includes unique design features, such as a conformally deposited base dielectric material that enhances reliability and functionality.

Career Highlights

Hiroaki Iuchi has had an impressive career with key roles at companies such as SanDisk Technologies Inc. and SanDisk 3D LLC. His expertise in semiconductor technology and memory design has solidified his reputation as a leading innovator in the industry.

Collaborations

Throughout his career, Iuchi has collaborated with other talented professionals, including Naoki Takeguchi and Hitomi Fujimoto. These partnerships have allowed for the exchange of ideas and the advancement of technology within the semiconductor field.

Conclusion

Hiroaki Iuchi's contributions to the realm of non-volatile memory technology demonstrate his dedication to innovation and excellence. With numerous patents reflecting his expertise and creativity, Iuchi continues to be a pivotal figure in advancing semiconductor design and functionality. His work not only shapes the present but also paves the way for future advancements in memory technology.

This text is generated by artificial intelligence and may not be accurate.

Please report any incorrect information to support@idiyas.com