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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 12213320 B1

PDFFull Text
Date of Patent:
Jan. 28, 2025

Filed:

May. 24, 2021

Three-dimensional memory device with finned support pillar structures and methods for forming the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Seiji Shimabukuro, Yokkaichi, JP;

Takashi Yamaha, Obu, JP;

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

THE MARBURY LAW GROUP PLLC

Primary Examiner:

Yu-Hsi D Sun

Int. Cl.
CPC ...
H10B 43/50 (2023.01); H01L 21/768 (2006.01); H10B 41/10 (2023.01); H10B 41/27 (2023.01); H10B 41/50 (2023.01); H10B 43/10 (2023.01); H10B 43/27 (2023.01); H10B 51/10 (2023.01); H10B 51/20 (2023.01); H10B 51/50 (2023.01); H01L 23/522 (2006.01);
U.S. Cl.
CPC ...
H10B 43/50 (2023.02); H01L 21/76802 (2013.01); H01L 21/76829 (2013.01); H10B 41/10 (2023.02); H10B 41/27 (2023.02); H10B 41/50 (2023.02); H10B 43/10 (2023.02); H10B 43/27 (2023.02); H10B 51/10 (2023.02); H10B 51/20 (2023.02); H10B 51/50 (2023.02); H01L 23/5226 (2013.01);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, memory openings vertically extending through a first region of the alternating stack, memory opening fill structures located in the memory openings, and support pillar structures vertically extending through a second region of the alternating stack. Each of the support pillar structures includes a central columnar structure and a set of fins laterally protruding from the central columnar structure at levels of a subset of the electrically conductive layers.

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