IDiyas

For the Inventor, By the Inventor

Yokkaichi, Japan

Masanori Tsutsumi

USPTO Granted Patents = 40 

Average Co-Inventor Count = 3.5

ph-index = 13

Forward Citations = 526(Granted Patents)


Company Filing History:

goldMedal40 out of 4,519 
 
Sandisk Technologies Inc.
 patents

Years Active: 2016-2025

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40 patents (USPTO):Explore Patents
1. 12424602 - Bonded assembly containing conductive via structures extending through word lines in a staircase region and methods for making the same (2025-09-23),
2. 12382638 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2025-08-05),
3. 12354944 - Three-dimensional memory device containing plural metal oxide blocking dielectric layers and method of making thereof (2025-07-08),
4. 12342537 - Three-dimensional memory device containing epitaxial pedestals and top source contact (2025-06-24),
5. 12101936 - Three dimensional memory device and method of making thereof by forming channel and memory film after word line replacement (2024-09-24),
6. 12058854 - Three-dimensional memory device with isolated source strips and method of making the same (2024-08-06),
7. 12046285 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2024-07-23),
8. 12029037 - Three-dimensional memory device with discrete charge storage elements and methods for forming the same (2024-07-02),
9. 11942429 - Three-dimensional memory device and method of making thereof using double pitch word line formation (2024-03-26),
10. 11894298 - Three-dimensional memory device containing amorphous and crystalline blocking dielectric layers (2024-02-06),
11. 11889684 - Three-dimensional memory device with separated source-side lines and method of making the same (2024-01-30),
12. 11417621 - Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same (2022-08-16),
13. RE49165 - On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same (2022-08-08),
14. 11393836 - Three-dimensional memory device with separated source-side lines and method of making the same (2022-07-19),
15. 11367733 - Memory die with source side of three-dimensional memory array bonded to logic die and methods of making the same (2022-06-21),

Title: Innovator Spotlight: Masanori Tsutsumi

Introduction: Masanori Tsutsumi, a renowned inventor based in Yokkaichi, Japan, has made significant contributions to the field of memory technology. With an impressive portfolio of 36 patents, Tsutsumi’s work has been pivotal in advancing three-dimensional memory devices.

Latest Patents: Among his latest patents, Tsutsumi has developed groundbreaking methodologies for creating three-dimensional memory devices. One notable invention, titled "Three Dimensional Memory Device and Method of Making Thereof by Forming Channel and Memory Film After Word Line Replacement," describes a method that includes forming an alternating stack of insulating layers and sacrificial material layers over a substrate. It also encompasses forming a memory opening and utilizing electrically conductive layers to enhance memory device performance. Another significant patent, "Three-Dimensional Memory Device with Isolated Source Strips and Method of Making the Same," details the design of a memory die that incorporates source-select-level electrically conductive strips and dielectric isolation structures, further contributing to the efficiency and reliability of memory technologies.

Career Highlights: Tsutsumi is currently employed at SanDisk Technologies Inc., where he has played a critical role in the development of innovative memory solutions. His expertise and dedication to research and development have made him a respected figure in the semiconductor industry.

Collaborations: Throughout his career, Masanori Tsutsumi has collaborated with esteemed colleagues such as Shinsuke Yada and Yanli Zhang. Together, they have worked on pioneering advancements in memory technology, driving forward the boundaries of what is possible in this dynamic field.

Conclusion: Masanori Tsutsumi's contributions to memory device technology underline the importance of innovation in the tech industry. His patents not only reflect his commitment to advancing technology but also provide insight into the future possibilities within three-dimensional memory solutions. As he continues to innovate at SanDisk Technologies Inc., the impact of his work will undoubtedly resonate throughout the industry for years to come.

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