The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 24, 2025
Filed:
Mar. 17, 2022
Sandisk Technologies Llc, Addison, TX (US);
Adarsh Rajashekhar, Santa Clara, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Masanori Tsutsumi, Yokkaichi, JP;
Fei Zhou, San Jose, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A semiconductor structure includes a doped single crystalline semiconductor material layer, a metal or metal alloy source contact layer located over a back side of the doped single crystalline semiconductor material layer, a dielectric isolation layer located over a front side of the doped single crystalline semiconductor material layer, an alternating stack of insulating layers and electrically conductive layers located over the dielectric isolation layer, a memory opening vertically extending through the alternating stack and the dielectric isolation layer and at least partially through the doped single crystalline semiconductor material layer, a memory film and a vertical semiconductor channel located within the memory opening, such that the vertical semiconductor channel vertically extends through the dielectric isolation layer and into the doped single crystalline semiconductor material layer, and a single crystalline semiconductor pedestal contacting the doped single crystalline semiconductor material layer and the vertical semiconductor channel.