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For the Inventor, By the Inventor

San Jose, CA, United States of America

Fei Zhou

LinkedIn
USPTO Granted Patents = 91 

 

Average Co-Inventor Count = 4.0

ph-index = 17

Forward Citations = 832(Granted Patents)

Forward Citations (Not Self Cited) = 700(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Milpitas, CA (US) (2013 - 2022)
  • Pleasanton, CA (US) (2022)
  • Campbell, CA (US) (2022)
  • San Jose, CA (US) (2018 - 2024)

Company Filing History:

goldMedal85 out of 4,573 
 
Sandisk Technologies Inc.
 patents
silverMedal6 out of 36 
 
Airhop Communications, Inc.
 patents

Years Active: 2013-2025

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Areas of Expertise:
Three-Dimensional Memory Device
Ferroelectric Memory Elements
Semiconductor Devices
Neural Networks
Epitaxial Vertical Semiconductor Channel
Metal-Organic Framework
Charge Storage Elements
Tungsten Deposition Process
Multibit Ferroelectric Memory Cells
Word Line Diffusion Barriers
Cross-Point Array
Stacked Die Assembly
91 patents (USPTO):Explore Patents
1. 12484222 - Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening (2025-11-25),
2. 12457738 - Three-dimensional memory device containing engineered charge storage elements and methods for forming the same (2025-10-28),
3. 12453088 - Three-dimensional memory device including discrete charge storage elements and methods of forming the same (2025-10-21),
4. 12363905 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-15),
5. 12356627 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-08),
6. 12347773 - Three-dimensional memory device containing variable thickness word lines with reduced length metal nitride diffusion barriers and methods for forming the same (2025-07-01),
7. 12342537 - Three-dimensional memory device containing epitaxial pedestals and top source contact (2025-06-24),
8. 12289889 - Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof (2025-04-29),
9. 12217965 - Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant (2025-02-04),
10. 12176203 - Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant (2024-12-24),
11. 12137565 - Three-dimensional memory device with vertical word line barrier and methods for forming the same (2024-11-05),
12. 12137554 - Three-dimensional memory device with word-line etch stop liners and method of making thereof (2024-11-05),
13. 12124247 - Implementation of deep neural networks for testing and quality control in the production of memory devices (2024-10-22),
14. 12096636 - Semiconductor device containing bit lines separated by air gaps and methods for forming the same (2024-09-17),
15. 11984395 - Semiconductor device containing bit lines separated by air gaps and methods for forming the same (2024-05-14),

Title: The Innovative Journey of Fei Zhou

Introduction: Fei Zhou, a talented inventor based in San Jose, CA, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Fei Zhou holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a background in computer science and engineering, Fei Zhou has worked for top tech companies in Silicon Valley, where he honed his skills and developed a passion for creating innovative solutions to complex problems.

Collaborations: Throughout his career, Fei Zhou has collaborated with leading researchers and engineers in the industry, fostering a culture of creativity and teamwork that has led to the development of revolutionary products.

Conclusion: Fei Zhou's dedication to pushing the boundaries of technology and his relentless pursuit of innovation make him a standout figure in the world of inventors, with a promising future ahead in shaping the technological landscape.

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