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For the Inventor, By the Inventor

San Jose, CA, United States of America

Fei Zhou

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This inventor holds 95 USPTO granted patents and 11 published patent applications and 4 EPO patents, primarily in Three-Dimensional Memory (CPC class H01L27-11582). Top assignees: Sandisk Technologies Inc., Airhop Communications, Inc.. Active years: 2013-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Fei Zhou. Retrieved from https://idiyas.com/inventor/fei-zhou-zqtlgi68

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 95 

% Patents Active = 94.7

 

Average Co-Inventor Count = 4.0

ph-index = 17

Forward Citations = 998(Granted Patents)

Forward Citations (Not Self Cited) = 700(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Milpitas, CA (US) (2013 - 2022)
  • Pleasanton, CA (US) (2022)
  • Campbell, CA (US) (2022)
  • San Jose, CA (US) (2018 - 2024)

Company Filing History:

goldMedal89 out of 4,962 
 
Sandisk Technologies Inc.
 patents
silverMedal6 out of 37 
 
Airhop Communications, Inc.
 patents

Years Active: 2013-2026

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Areas of Expertise:
Three-Dimensional Memory
Ferroelectric Elements
Semiconductor Structures
Charge Storage
Word Lines
Tungsten Deposition
Memory Devices
Epitaxial Channels
Composite Word Lines
Inter-Line Insulators
Multibit Memory Cells
Vertical Tubular Liners
95 patents (USPTO):Explore Patents
1. 12764957 - Memory device including aluminum nitride diffusion barrier layer and methods for forming the same (2026-10-13),
2. 12733161 - Three-dimensional memory device including discrete charge storage elements and methods of forming the same (2026-09-08),
3. 12727162 - Three-dimensional memory device including replacement insulating layers and methods of forming the same (2026-09-01),
4. 12672291 - Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making the same (2026-06-30),
5. 12484222 - Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening (2025-11-25),
6. 12457738 - Three-dimensional memory device containing engineered charge storage elements and methods for forming the same (2025-10-28),
7. 12453088 - Three-dimensional memory device including discrete charge storage elements and methods of forming the same (2025-10-21),
8. 12363905 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-15),
9. 12356627 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-08),
10. 12347773 - Three-dimensional memory device containing variable thickness word lines with reduced length metal nitride diffusion barriers and methods for forming the same (2025-07-01),
11. 12342537 - Three-dimensional memory device containing epitaxial pedestals and top source contact (2025-06-24),
12. 12289889 - Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof (2025-04-29),
13. 12217965 - Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant (2025-02-04),
14. 12176203 - Methods and apparatuses for forming semiconductor devices containing tungsten layers using a tungsten growth suppressant (2024-12-24),
15. 12137565 - Three-dimensional memory device with vertical word line barrier and methods for forming the same (2024-11-05),

Title: The Innovative Journey of Fei Zhou

Introduction: Fei Zhou, a talented inventor based in San Jose, CA, has made significant contributions to the field of technology through his groundbreaking innovations and patents.

Latest Patents: Fei Zhou holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a background in computer science and engineering, Fei Zhou has worked for top tech companies in Silicon Valley, where he honed his skills and developed a passion for creating innovative solutions to complex problems.

Collaborations: Throughout his career, Fei Zhou has collaborated with leading researchers and engineers in the industry, fostering a culture of creativity and teamwork that has led to the development of revolutionary products.

Conclusion: Fei Zhou's dedication to pushing the boundaries of technology and his relentless pursuit of innovation make him a standout figure in the world of inventors, with a promising future ahead in shaping the technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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