The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 01, 2025

Filed:

May. 11, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Rahul Sharangpani, Fremont, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Fei Zhou, San Jose, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/535 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01);
U.S. Cl.
CPC ...
H01L 23/5283 (2013.01); H01L 23/535 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02);
Abstract

A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, memory openings vertically extending through the alternating stack, memory opening fill structures located in the memory openings and including a respective vertical semiconductor channel and a respective vertical stack of memory elements, and a first backside trench fill structure and a second backside trench fill structure. Each of the electrically conductive layers includes a respective metal nitride liner and a respective metal fill material region. The respective metal fill material region includes a respective first-thickness portion having a respective first vertical thickness and a respective second-thickness portion having a respective second vertical thickness that is greater than the respective first vertical thickness.


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