The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 04, 2025
Filed:
Jan. 11, 2022
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Fei Zhou, San Jose, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Yujin Terasawa, Yokkaichi, JP;
Naoki Takeguchi, Nagoya, JP;
Kensuke Yamaguchi, Yokkaichi, JP;
Masaaki Higashitani, Cupertino, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/285 (2006.01); C23C 16/14 (2006.01); C23C 16/455 (2006.01); H01L 21/768 (2006.01); H10B 41/27 (2023.01); H10B 43/27 (2023.01); H10B 51/20 (2023.01); H10B 63/00 (2023.01);
U.S. Cl.
CPC ...
H01L 21/28568 (2013.01); C23C 16/14 (2013.01); C23C 16/45525 (2013.01); H01L 21/76876 (2013.01); H10B 41/27 (2023.02); H10B 43/27 (2023.02); H10B 51/20 (2023.02); H10B 63/84 (2023.02); H01L 21/76846 (2013.01);
Abstract
A method of depositing a metal includes providing a structure a process chamber, and providing a metal fluoride gas and a growth-suppressant gas into the process chamber to deposit the metal over the structure. The metal may comprise a word line or another conductor of a three-dimensional memory device.