The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 15, 2025

Filed:

Aug. 19, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Kartik Sondhi, Milpitas, CA (US);

Rahul Sharangpani, Fremont, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Tiffany Santos, Palo Alto, CA (US);

Fei Zhou, San Jose, CA (US);

Joyeeta Nag, San Jose, CA (US);

Bhagwati Prasad, San Jose, CA (US);

Adarsh Rajashekhar, Santa Clara, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 51/20 (2023.01); H10B 51/30 (2023.01);
U.S. Cl.
CPC ...
H10B 51/20 (2023.02); H10B 51/30 (2023.02);
Abstract

A semiconductor memory device includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and including a vertical stack of discrete ferroelectric material portions and a vertical semiconductor channel. In one embodiment, the discrete ferroelectric material portions include a ferroelectric alloy material of a first dielectric metal oxide material and a second dielectric metal oxide material. In another embodiment, each of the discrete ferroelectric material portions is oxygen-deficient.


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