Bhagwati Prasad

This inventor holds 34 USPTO granted patents and 1 published patent application, primarily in Magnetoresistive Memory. Top assignees: Western Digital Technologies, Inc., Sandisk Technologies Inc.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bhagwati Prasad. Retrieved from https://idiyas.com/inventor/bhagwati-prasad

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 34 (Patent Applications = 1)

% Patents Active = 91.2

Average Co-Inventor Count = 2.6

ph-index = 5

Forward Citations = 76(Granted Patents)

Location History:

Jose, CA (US) (2021)
San Jose, CA (US) (2021 - 2024)

Company Filing History:

22 out of 5,427

Western Digital Technologies, Inc.

patents

12 out of 4,943

Sandisk Technologies Inc.

patents

Years Active: 2021-2026

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Areas of Expertise:

Magnetoresistive Memory

Ferroelectric Memory

Voltage-Controlled Anisotropy

Magnetic Tunnel Junction

Tunneling Metamagnetic Resistance

Spin Filter

Data Storage Device

Composition-Controlled Elements

Multiferroic Regions

Phase Controlled Anisotropy

Enhanced Memory Window

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12592267 - Magnetoresistive memory device and method of operating same using phase controlled magnetic anisotropy (2026-03-31),

2. 12363905 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-15),

3. 12356627 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-08),

4. 12225828 - Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer (2025-02-11),

5. 11996462 - Ferroelectric field effect transistors having enhanced memory window and methods of making the same (2024-05-28),

6. 11889702 - Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same (2024-01-30),

7. 11887640 - Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same (2024-01-30),

8. 11871679 - Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same (2024-01-09),

9. 11839162 - Magnetoresistive memory device including a plurality of reference layers (2023-12-05),

10. 11545506 - Ferroelectric field effect transistors having enhanced memory window and methods of making the same (2023-01-03),

11. 11502104 - Antiferroelectric memory devices and methods of making the same (2022-11-15),

12. 11443790 - Spinel containing magnetic tunnel junction and method of making the same (2022-09-13),

13. 11430813 - Antiferroelectric memory devices and methods of making the same (2022-08-30),

14. 11417379 - Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same (2022-08-16),

15. 11411170 - Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same (2022-08-09),

Title: Innovations and Contributions of Bhagwati Prasad in Memory Device Technologies

Introduction

Bhagwati Prasad, located in San Jose, CA, has made significant contributions to the field of memory device technologies, holding a remarkable portfolio of 31 patents. His innovative approaches have paved the way for advancements in various semiconductor technologies, particularly in the realm of magnetic anisotropy and ferroelectric transistors.

Latest Patents

Among his latest patents is the invention related to voltage-controlled magnetic anisotropy (VCMA) memory devices. This memory device includes a first electrode, a second electrode, and a magnetic tunnel junction situated between the two electrodes. The magnetic tunnel junction consists of a reference layer, a free layer, and a nonmagnetic tunnel barrier layer positioned between the reference layer and the free layer. A key feature of this invention is the incorporation of a platinum-containing layer that includes platinum and at least one additional element chosen from iridium, hafnium, or ruthenium, which is in contact with the free layer.

Additionally, Bhagwati Prasad has patented ferroelectric field-effect transistors that demonstrate enhanced memory window characteristics. This invention involves a semiconductor transistor featuring a semiconductor channel that includes a strained and/or defect-containing ferroelectric gate dielectric layer. The transistor also consists of a source region positioned at one end of the channel and a drain region at the opposite end, which enhances the overall performance of memory operations.

Career Highlights

Bhagwati has contributed his expertise to prominent companies such as Western Digital Technologies, Inc. and SanDisk Technologies Inc., where he has worked collaboratively on various pioneering projects. His extensive experience in these environments has allowed him to refine and innovate complex semiconductor technologies.

Collaborations

During his career, Bhagwati Prasad has collaborated with notable colleagues including Alan Kalitsov and Derek Stewart. These partnerships have fostered a creative and productive atmosphere, leading to the development of groundbreaking technologies in the field of memory devices.

Conclusion

Bhagwati Prasad's innovative spirit and relentless pursuit of advancements in memory device technologies have resulted in a substantial portfolio of patents that significantly impact the electronics industry. His contributions not only demonstrate his technical prowess but also highlight the importance of collaboration in driving technological growth. As he continues his work, the future seems promising for further innovations in memory technologies.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

1 patent pending: