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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11545506 B1

PDFFull Text
Date of Patent:
Jan. 03, 2023

Filed:

Nov. 13, 2020

Ferroelectric field effect transistors having enhanced memory window and methods of making the same

Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Bhagwati Prasad, San Jose, CA (US);

Joyeeta Nag, San Jose, CA (US);

Seung-Yeul Yang, Pleasanton, CA (US);

Adarsh Rajashekhar, Santa Clara, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:

The Marbury Law Group PLLC

Primary Examiner:

Matthew E Warren

Int. Cl.
CPC ...
H01L 27/11597 (2017.01); H01L 27/11587 (2017.01); H01L 29/66 (2006.01); H01L 29/51 (2006.01); H01L 27/1159 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); H01L 27/1159 (2013.01); H01L 27/11587 (2013.01); H01L 29/516 (2013.01); H01L 29/6684 (2013.01);
Abstract

A ferroelectric transistor includes a semiconductor channel comprising a semiconductor material, a strained and/or defect containing ferroelectric gate dielectric layer located on a surface of the semiconductor channel, a source region located on a first end portion of the semiconductor channel, and a drain region located on a second end portion of the semiconductor channel.

Find Patent Forward Citations

Prasad, Bhagwati. (2023). Ferroelectric field effect transistors having enhanced memory window and methods of making the same (U.S. Patent No. 11545506). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11545506

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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