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For the Inventor, By the Inventor

Pleasanton, CA, United States of America

Seung-Yeul Yang

USPTO Granted Patents = 11

Average Co-Inventor Count = 5.4

ph-index = 4

Forward Citations = 85(Granted Patents)


Company Filing History:

goldMedal11 out of 4,564 
 
Sandisk Technologies Inc.
 patents

Years Active: 2019-2024

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11 patents (USPTO):Explore Patents
1. 11996462 - Ferroelectric field effect transistors having enhanced memory window and methods of making the same (2024-05-28),
2. 11545506 - Ferroelectric field effect transistors having enhanced memory window and methods of making the same (2023-01-03),
3. 11309332 - Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal-containing conductive elements and method of making thereof (2022-04-19),
4. 11302716 - Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same (2022-04-12),
5. 11282848 - Three-dimensional memory device including ferroelectric-metal-insulator memory cells and methods of making the same (2022-03-22),
6. 11239254 - Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same (2022-02-01),
7. 11121140 - Ferroelectric tunnel junction memory device with integrated ovonic threshold switches (2021-09-14),
8. 11024648 - Ferroelectric memory devices including a stack of ferroelectric and antiferroelectric layers and method of making the same (2021-06-01),
9. 10937809 - Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof (2021-03-02),
10. 10381559 - Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same (2019-08-13),
11. 10381409 - Three-dimensional phase change memory array including discrete middle electrodes and methods of making the same (2019-08-13),

Title: Seung-Yeul Yang: Innovator in Ferroelectric Transistor Technology

Introduction

Seung-Yeul Yang is a prominent inventor based in Pleasanton, CA (US). He has made significant contributions to the field of semiconductor technology, particularly in the development of ferroelectric field effect transistors. With a total of 11 patents to his name, Yang's work has had a substantial impact on the industry.

Latest Patents

Yang's latest patents include innovations in ferroelectric field effect transistors that feature enhanced memory windows. These transistors consist of a semiconductor channel made from a semiconductor material, along with a strained and/or defect-containing ferroelectric gate dielectric layer positioned on the surface of the semiconductor channel. The design also incorporates a source region located at one end of the channel and a drain region at the opposite end, enhancing the overall functionality of the device.

Career Highlights

Throughout his career, Seung-Yeul Yang has been associated with Sandisk Technologies Inc., where he has played a crucial role in advancing semiconductor technologies. His expertise in ferroelectric materials has positioned him as a key figure in the development of next-generation electronic devices.

Collaborations

Yang has collaborated with notable colleagues such as Raghuveer S Makala and Adarsh Rajashekhar. These partnerships have fostered innovation and have contributed to the successful development of his patented technologies.

Conclusion

Seung-Yeul Yang's contributions to the field of ferroelectric transistors exemplify his dedication to innovation in semiconductor technology. His work continues to influence advancements in electronic devices, showcasing the importance of his inventions in the industry.

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