The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 14, 2021
Filed:
Jan. 08, 2020
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Seung-Yeul Yang, Pleasanton, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Fei Zhou, San Jose, CA (US);
Adarsh Rajashekhar, Santa Clara, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 47/00 (2006.01); H01L 27/11514 (2017.01); H01L 49/02 (2006.01); H01L 27/11504 (2017.01); H01L 45/00 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11514 (2013.01); H01L 23/528 (2013.01); H01L 27/11504 (2013.01); H01L 28/40 (2013.01); H01L 45/1233 (2013.01); H01L 45/141 (2013.01);
Abstract
A ferroelectric tunnel junction memory device includes a bit line, a word line and a memory cell located between the bit line and the word line. The memory cell includes a ferroelectric tunneling dielectric portion and an ovonic threshold switch material portion.