Santa Clara, CA, United States of America

Adarsh Rajashekhar

This inventor holds 70 USPTO granted patents and 19 published patent applications and 2 EPO patents, primarily in Three-Dimensional Memory. Top assignee: Sandisk Technologies Inc.. Active years: 2019-2026.

USPTO Granted Patents = 70 (Patent Applications = 19)

% Patents Active = 94.3

EPO Patents = 2 (Patent Applications = 3)

Average Co-Inventor Count = 4.4

ph-index = 12

Forward Citations = 548(Granted Patents)

Forward Citations (Not Self Cited) = 380(Dec 10, 2025)

Location History:

San Jose, CA (US) (2019)
Santa Clara, CA (US) (2019 - 2024)

Company Filing History:

70 out of 4,943

Sandisk Technologies Inc.

patents

Years Active: 2019-2026

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Areas of Expertise:

Three-Dimensional Memory

Ferroelectric Devices

Semiconductor Structures

Charge Storage Elements

Epitaxial Vertical Channels

Memory Device Manufacturing

Composite Hard Masks

Vertical Word Lines

Multibit Memory Cells

Low Resistance Contacts

Bonded Memory Devices

Silicon Oxynitride Portions

70 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12720746 - Three-dimensional memory device including backside semiconductor source structure and methods for forming the same (2026-08-25),

2. 12672291 - Memory device containing ferroelectric-spacer-ferroelectric memory elements and method of making the same (2026-06-30),

3. 12581652 - Three-dimensional memory devices having channel cap structures and methods for forming the same (2026-03-17),

4. 12575100 - Three-dimensional memory device including discrete charge storage elements and method of making thereof (2026-03-10),

5. 12484222 - Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening (2025-11-25),

6. 12457738 - Three-dimensional memory device containing engineered charge storage elements and methods for forming the same (2025-10-28),

7. 12453088 - Three-dimensional memory device including discrete charge storage elements and methods of forming the same (2025-10-21),

8. 12432917 - Three-dimensional memory device including discrete memory elements and method of making the same (2025-09-30),

9. 12387976 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings (2025-08-12),

10. 12363905 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-15),

11. 12362301 - Bonded memory devices and methods of making the same (2025-07-15),

12. 12342537 - Three-dimensional memory device containing epitaxial pedestals and top source contact (2025-06-24),

13. 12317502 - Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same (2025-05-27),

14. 12289889 - Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof (2025-04-29),

15. 12261080 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings (2025-03-25),

Title: The Innovative Journey of Adarsh Rajashekhar

Introduction: Adarsh Rajashekhar is a visionary inventor based in Santa Clara, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Adarsh Rajashekhar holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a background in computer science and engineering, Adarsh Rajashekhar has worked with top tech companies in Silicon Valley, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Adarsh Rajashekhar has collaborated with leading researchers, engineers, and developers to bring cutting-edge ideas to life, fostering a culture of innovation and creativity.

Conclusion: Adarsh Rajashekhar's relentless pursuit of innovation and his passion for creating technology that shapes the future make him a true pioneer in the world of inventions.