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For the Inventor, By the Inventor

Santa Clara, CA, United States of America

Adarsh Rajashekhar

LinkedIn
USPTO Granted Patents = 66 

 

Average Co-Inventor Count = 4.4

ph-index = 11

Forward Citations = 449(Granted Patents)

Forward Citations (Not Self Cited) = 380(Dec 10, 2025)


Location History:

  • San Jose, CA (US) (2019)
  • Santa Clara, CA (US) (2019 - 2024)

Company Filing History:

goldMedal66 out of 4,529 
 
Sandisk Technologies Inc.
 patents

Years Active: 2019-2025

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Areas of Expertise:
Three-Dimensional Memory Device
Ferroelectric Memory Elements
Epitaxial Vertical Semiconductor Channel
Memory Device Fabrication
Composite Word Lines
Bonded Memory Devices
Multibit Ferroelectric Memory Cells
Semiconductor Structure
Vertical Word Lines
Charge Storage Elements
Deep Via Openings
Stacked Die Assembly
66 patents (USPTO):Explore Patents
1. 12484222 - Three-dimensional memory device and method of making thereof by non-conformal selective deposition of insulating spacers in a memory opening (2025-11-25),
2. 12457738 - Three-dimensional memory device containing engineered charge storage elements and methods for forming the same (2025-10-28),
3. 12453088 - Three-dimensional memory device including discrete charge storage elements and methods of forming the same (2025-10-21),
4. 12432917 - Three-dimensional memory device including discrete memory elements and method of making the same (2025-09-30),
5. 12387976 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings (2025-08-12),
6. 12363905 - Memory device containing composition-controlled ferroelectric memory elements and method of making the same (2025-07-15),
7. 12362301 - Bonded memory devices and methods of making the same (2025-07-15),
8. 12342537 - Three-dimensional memory device containing epitaxial pedestals and top source contact (2025-06-24),
9. 12317502 - Three-dimensional memory device containing ferroelectric-assisted memory elements and method of making the same (2025-05-27),
10. 12289889 - Three-dimensional memory device containing templated crystalline ferroelectric memory elements and method of making thereof (2025-04-29),
11. 12261080 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings (2025-03-25),
12. 12255242 - Three-dimensional memory device including vertical stack of tubular graded silicon oxynitride portions (2025-03-18),
13. 12243776 - Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings (2025-03-04),
14. 12219776 - Ferroelectric devices including a single crystalline ferroelectric layer and method of making the same (2025-02-04),
15. 12137565 - Three-dimensional memory device with vertical word line barrier and methods for forming the same (2024-11-05),

Title: The Innovative Journey of Adarsh Rajashekhar

Introduction: Adarsh Rajashekhar is a visionary inventor based in Santa Clara, CA, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Adarsh Rajashekhar holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a background in computer science and engineering, Adarsh Rajashekhar has worked with top tech companies in Silicon Valley, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Adarsh Rajashekhar has collaborated with leading researchers, engineers, and developers to bring cutting-edge ideas to life, fostering a culture of innovation and creativity.

Conclusion: Adarsh Rajashekhar's relentless pursuit of innovation and his passion for creating technology that shapes the future make him a true pioneer in the world of inventions.

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