The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 12, 2025

Filed:

Jan. 09, 2023
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Roshan Jayakhar Tirukkonda, Milpitas, CA (US);

Bing Zhou, San Jose, CA (US);

Rahul Sharangpani, Fremont, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Senaka Kanakamedala, San Jose, CA (US);

Adarsh Rajashekhar, Santa Clara, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/30608 (2013.01);
Abstract

A method of forming a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming a first etch mask material layer, forming a first cladding liner, and forming a via opening through the alternating stack by performing an anisotropic etch process that employs a combination of at least the first cladding liner and the first etch mask material layer as a composite etch mask structure.


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