Milpitas, CA, United States of America

Roshan Jayakhar Tirukkonda


Average Co-Inventor Count = 5.5

ph-index = 1


Years Active: 2022-2025

where 'Filed Patents' based on already Granted Patents

6 patents (USPTO):

Title: Innovations of Roshan Jayakhar Tirukkonda

Introduction

Roshan Jayakhar Tirukkonda is a notable inventor based in Milpitas, California. He has made significant contributions to the field of memory devices, holding a total of six patents. His work focuses on advanced methods for creating three-dimensional memory structures, which are crucial for modern computing technologies.

Latest Patents

One of his latest patents is titled "Method of making a three-dimensional memory device using composite hard masks for formation of deep via openings." This innovative method involves forming an alternating stack of first and second material layers over a substrate. It includes the creation of a first etch mask material layer and a first cladding liner, followed by an anisotropic etch process that utilizes a composite etch mask structure. Another patent with a similar title also details a method for forming a structure that includes a mask layer and a cavity, emphasizing the use of a first cladding liner to create via openings through the alternating stack.

Career Highlights

Roshan is currently employed at Sandisk Technologies Inc., where he continues to push the boundaries of memory device technology. His expertise in the field has led to numerous advancements that enhance the performance and efficiency of memory devices.

Collaborations

Throughout his career, Roshan has collaborated with talented individuals such as Senaka Kanakamedala and Raghuveer S Makala. These collaborations have fostered an environment of innovation and creativity, contributing to the success of their projects.

Conclusion

Roshan Jayakhar Tirukkonda's work in the field of memory devices exemplifies the spirit of innovation. His patents reflect a deep understanding of technology and a commitment to advancing the industry. His contributions will undoubtedly have a lasting impact on the future of memory technology.

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