The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 02, 2026
Filed:
Jul. 03, 2023
Western Digital Technologies, Inc., San Jose, CA (US);
Roshan Jayakhar Tirukkonda, Milpitas, CA (US);
Kartik Sondhi, Milpitas, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A method includes forming an alternating stack of first material layers and second material layers, forming an etch mask material layer containing an opening over the alternating stack, forming a non-conformal cladding liner over the etch mask material layer, where the non-conformal cladding liner includes a horizontally extending portion that overlies a horizontal top surface of the etch mask material layer and a vertically extending portion contacting a sidewall of the opening in the etch mask material layer, implanting ions of dopant atoms into the non-conformal cladding line, and performing an second anisotropic etch process that etches an unmasked portion of the alternating stack selective to the etch mask material layer and the non-conformal cladding liner. The non-conformal cladding liner provides a higher etch resistance relative to the unmasked portion of the alternating stack after the step of implanting ions than before the step of implanting ions.