The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 25, 2025

Filed:

Mar. 31, 2022
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Roshan Jayakhar Tirukkonda, Milpitas, CA (US);

Monica Titus, Santa Clara, CA (US);

Senaka Kanakamedala, San Jose, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Rahul Sharangpani, Fremont, CA (US);

Adarsh Rajashekhar, Santa Clara, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/306 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76831 (2013.01); H01L 21/30608 (2013.01);
Abstract

A method of forming a structure includes forming an alternating stack of first material layers and second material layers over a substrate, forming a mask layer over the alternating stack, forming a cavity in the mask layer, forming a first cladding liner on a sidewall of the cavity in the mask layer, and forming a via opening the alternating stack by performing an anisotropic etch process that transfers a pattern of the cavity in the mask layer through the alternating stack using a combination of the first cladding liner and the mask layer as an etch mask.


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