The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2025
Filed:
Jul. 20, 2023
Sandisk Technologies Llc, Addison, TX (US);
Rahul Sharangpani, Fremont, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Adarsh Rajashekhar, Santa Clara, CA (US);
Fei Zhou, San Jose, CA (US);
Bing Zhou, San Jose, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Roshan Jayakhar Tirukkonda, Milpitas, CA (US);
Kartik Sondhi, Milpitas, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A method of forming a memory device includes forming an alternating stack of insulating layers including a first insulating material and sacrificial material layers including a first sacrificial material over a substrate, forming a memory opening through the alternating stack, performing a first selective material deposition process that selectively grows a second sacrificial material from physically exposed surfaces of the sacrificial material layers to form a vertical stack of sacrificial material portions; forming a memory opening fill structure in the memory opening, where the memory opening fill structure includes a vertical stack of memory elements and a vertical semiconductor channel, and replacing a combination of the vertical stack of sacrificial material portions and the sacrificial material layers with electrically conductive layers.