The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 07, 2026
Filed:
Jul. 03, 2023
Sandisk Technologies Llc, Addison, TX (US);
Rahul Sharangpani, Fremont, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Roshan Jayakhar Tirukkonda, Milpitas, CA (US);
Kartik Sondhi, Milpitas, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A method of forming a structure includes forming an alternating stack of first material layers and second material layers over a substrate; forming an etch mask material layer containing an opening over the alternating stack; performing a first anisotropic etch process that etches unmasked upper portions of the alternating stack to form a via opening below the opening in the etch mask material layer; forming a combination of a non-conformal cladding liner and a conformal sacrificial spacer layer over the etch mask material layer and in peripheral portions of the via opening; performing a punch-through process that etches a horizontally-extending portion of the conformal sacrificial spacer layer from a bottom portion of the via opening; and vertically extending the via opening by performing a second anisotropic etch process that etches unmasked lower portions of the alternating stack selective to the non-conformal cladding liner and the conformal sacrificial spacer layer.