The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 20, 2022
Filed:
Dec. 15, 2020
Sandisk Technologies Llc, Addison, TX (US);
Roshan Tirukkonda, Milpitas, CA (US);
Ramy Nashed Bassely Said, San Jose, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Adarsh Rajashekhar, Santa Clara, CA (US);
Fei Zhou, San Jose, CA (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers and memory stack structures vertically extending through the alternating stack. Each of the memory stack structures includes a vertical semiconductor channel and a vertical stack of ferroelectric memory elements surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers. Each of the ferroelectric memory elements includes a respective vertical stack of a first ferroelectric material portion and a second ferroelectric material portion that differs from the first ferroelectric material portion by at least one of a material composition and a lateral thickness.