The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 04, 2025
Filed:
Oct. 22, 2021
Sandisk Technologies Llc, Addison, TX (US);
Roshan Jayakhar Tirukkonda, Milpitas, CA (US);
Senaka Kanakamedala, San Jose, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Monica Titus, Santa Clara, CA (US);
Adarsh Rajashekhar, Santa Clara, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A source-level semiconductor layer and an alternating stack of first material layers and second material layers is formed above a substrate. A hard mask layer is formed over the alternating stack, and is subsequently patterned to provide a pattern of cavities therethrough. Via openings are formed through the alternating stack by performing an anisotropic etch process. A cladding liner is formed on sidewalls of the cavities in the hard mask layer and on a top surface of the hard mask layer. The via openings are vertically extended at least through the source-level semiconductor layer by performing a second anisotropic etch process employing a combination of the cladding liner and the hard mask layer as an etch mask.