The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 30, 2026
Filed:
Jan. 30, 2023
Sandisk Technologies Llc, Addison, TX (US);
Adarsh Rajashekhar, Santa Clara, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Kartik Sondhi, Milpitas, CA (US);
Rahul Sharangpani, Fremont, CA (US);
Fei Zhou, San Jose, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A ferroelectric memory device includes an alternating stack of insulating layers and composite layers that are interlaced along a vertical direction, a memory opening vertically extending through the alternating stack, a memory opening fill structure located in the memory opening and including a vertical semiconductor channel and an inner ferroelectric material layer including a first ferroelectric material, and a vertical stack of electrically-non-insulating material portions located between the inner ferroelectric material layer and the composite layers. Each of the composite layers includes a respective electrically conductive layer and a respective outer ferroelectric material layer including a second ferroelectric material, embedding the respective electrically conductive layer, and contacting a respective electrically-non-insulating material portion.