The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 17, 2026

Filed:

Aug. 01, 2023
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Bing Zhou, San Jose, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Senaka Kanakamedala, San Jose, CA (US);

Rahul Sharangpani, Fremont, CA (US);

Adarsh Rajashekhar, Santa Clara, CA (US);

Assignee:

Sandisk Technologies, Inc., Milpitas, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); H10B 41/27 (2023.01); H10B 41/35 (2023.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10B 43/40 (2023.01); H10B 43/50 (2023.01); H10B 80/00 (2026.01); H10W 90/00 (2026.01); H10W 80/00 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); H10B 41/27 (2023.02); H10B 41/35 (2023.02); H10B 43/35 (2023.02); H10B 80/00 (2023.02); H10W 90/00 (2026.01); H10W 80/211 (2026.01); H10W 80/312 (2026.01); H10W 80/327 (2026.01); H10W 90/792 (2026.01);
Abstract

A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack and a memory opening fill structure located in the memory opening. A Group IV-containing material portion is formed by selective deposition on an end portion of the vertical semiconductor channel. Alternatively, a backside semiconductor cap structure can be formed directly on a bottom surface of the vertical semiconductor channel by selective or non-selective deposition of a semiconductor material.


Find Patent Forward Citations

Quick Actions:

Zhou, Bing. (2026). Three-dimensional memory devices having channel cap structures and methods for forming the same (U.S. Patent No. 12581652). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12581652

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