The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 01, 2021
Filed:
Jan. 15, 2020
Applicant:
Sandisk Technologies Llc, Addison, TX (US);
Inventors:
Rahul Sharangpani, Fremont, CA (US);
Adarsh Rajashekhar, Santa Clara, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Yanli Zhang, San Jose, CA (US);
Seung-Yeul Yang, Pleasanton, CA (US);
Fei Zhou, San Jose, CA (US);
Assignee:
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11597 (2017.01); G11C 11/22 (2006.01); H01L 27/11587 (2017.01); H01L 27/1159 (2017.01); H01L 27/11582 (2017.01); H01L 27/11524 (2017.01); H01L 27/11556 (2017.01); H01L 27/11565 (2017.01); H01L 27/1157 (2017.01); H01L 27/11519 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); G11C 11/223 (2013.01); H01L 27/1157 (2013.01); H01L 27/1159 (2013.01); H01L 27/11519 (2013.01); H01L 27/11524 (2013.01); H01L 27/11556 (2013.01); H01L 27/11565 (2013.01); H01L 27/11582 (2013.01); H01L 27/11587 (2013.01);
Abstract
A ferroelectric memory device includes a semiconductor channel, a gate electrode, and a ferroelectric memory element located between the semiconductor channel and the gate electrode. The ferroelectric memory element includes at least one ferroelectric material portion and at least one antiferroelectric material portion.