The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 01, 2022

Filed:

Jun. 24, 2020
Applicant:

Sandisk Technologies Llc, Addison, TX (US);

Inventors:

Rahul Sharangpani, Fremont, CA (US);

Adarsh Rajashekhar, Santa Clara, CA (US);

Raghuveer S. Makala, Campbell, CA (US);

Fei Zhou, San Jose, CA (US);

Seung-Yeul Yang, Pleasanton, CA (US);

Assignee:

SANDISK TECHNOLOGIES LLC, Addison, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/11597 (2017.01); H01L 27/11587 (2017.01);
U.S. Cl.
CPC ...
H01L 27/11597 (2013.01); H01L 27/11587 (2013.01);
Abstract

A three-dimensional memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, and a memory stack structure extending through the alternating stack. The memory stack structure includes a vertical semiconductor channel, a vertical stack of majority germanium layers each containing at least 51 atomic percent germanium, and a vertical stack of ferroelectric dielectric layers.


Find Patent Forward Citations

Sharangpani, Rahul. (2022). Three-dimensional memory device containing epitaxial ferroelectric memory elements and methods for forming the same (U.S. Patent No. 11239254). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11239254

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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