Three-dimensional memory device containing ferroelectric memory elements encapsulated by transition metal nitride materials and method of making thereof

Abstract

A three-dimensional ferroelectric memory device includes an alternating stack of insulating layers and electrically conductive layers located over a substrate, where each of the electrically conductive layers contains a respective transition metal nitride liner and a respective conductive fill material layer, a vertical semiconductor channel vertically extending through the alternating stack, a vertical stack of transition metal nitride spacers laterally surrounding the vertical semiconductor channel and located at levels of the electrically conductive layers, and discrete ferroelectric material portions laterally surrounding the respective transition metal nitride spacers and located at the levels of the electrically conductive layers.