The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 05, 2023
Filed:
Jun. 25, 2021
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventors:
Alan Kalitsov, San Jose, CA (US);
Derek Stewart, Livermore, CA (US);
Bhagwati Prasad, San Jose, CA (US);
Goran Mihajlovic, San Jose, CA (US);
Assignee:
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01F 10/32 (2006.01); G11C 11/16 (2006.01); H10B 61/00 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/80 (2023.02); G11C 11/161 (2013.01); H01F 10/329 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H10B 61/00 (2023.02); G11C 11/165 (2013.01);
Abstract
Magnetoelectric or magnetoresistive memory cells may include a plurality of reference layers and optionally a plurality of free layers to enhance the tunneling magnetoresistance (TMR) ratio.