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For the Inventor, By the Inventor

San Jose, CA, United States of America

Goran Mihajlovic

USPTO Granted Patents = 23 

Average Co-Inventor Count = 2.7

ph-index = 8

Forward Citations = 165(Granted Patents)


Company Filing History:

goldMedal12 out of 5,310 
 
Western Digital Technologies, Inc.
 patents
silverMedal7 out of 4,519 
 
Sandisk Technologies Inc.
 patents
bronzeMedal4 out of 987 
 
Hgst Netherlands, B.v.
 patents

Years Active: 2015-2024

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23 patents (USPTO):
1. 11968907 - Magnetoresistive memory device including a magnetoresistance amplification layer (2024-04-23),
2. 11839162 - Magnetoresistive memory device including a plurality of reference layers (2023-12-05),
3. 11361805 - Magnetoresistive memory device including a reference layer side dielectric spacer layer (2022-06-14),
4. 11004489 - Perpendicular spin transfer torque MRAM memory cell with in-stack thermal barriers (2021-05-11),
5. 10957346 - Magnetic recording devices and methods using a write-field-enhancement structure and bias current with offset pulses (2021-03-23),
6. 10891999 - Perpendicular SOT MRAM (2021-01-12),
7. 10832750 - Perpendicular spin transfer torque MRAM memory cell with cap layer to achieve lower current density and increased write margin (2020-11-10),
8. 10777248 - Heat assisted perpendicular spin transfer torque MRAM memory cell (2020-09-15),
9. 10726893 - Perpendicular SOT-MRAM memory cell using spin swapping induced spin current (2020-07-28),
10. 10643642 - Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field (2020-05-05),
11. 10388305 - Apparatus and method for writing to magnetic media using an AC bias current to enhance the write field (2019-08-20),
12. 10381552 - SOT MRAM cell with perpendicular free layer and its cross-point array realization (2019-08-13),
13. 10290337 - Three terminal SOT memory cell with anomalous hall effect (2019-05-14),
14. 10276783 - Gate voltage controlled perpendicular spin orbit torque MRAM memory cell (2019-04-30),
15. 10211393 - Spin accumulation torque MRAM (2019-02-19),

Title: Goran Mihajlovic: Innovator in Magnetoresistive Memory Technology

Introduction

Goran Mihajlovic, based in San Jose, CA, is a prominent inventor known for his groundbreaking contributions to the field of memory devices. With an impressive portfolio of 23 patents, Goran has been at the forefront of innovations that enhance data storage technology. His work primarily focuses on magnetoresistive memory devices, which play a crucial role in modern computing.

Latest Patents

Among his notable inventions, Goran’s recent patents include a magnetoresistive memory device featuring a magnetoresistance amplification layer. This innovative device comprises a magnetic tunnel junction layer stack, which includes a reference layer with a fixed magnetization direction, a tunnel barrier layer made of dielectric material, and a free layer. The addition of an asymmetric magnetoresistance layer enhances its performance, making it a significant advancement in memory technology.

Another of his latest patents involves a magnetoresistive memory device that incorporates a plurality of reference layers alongside optional free layers. This design aims to improve the tunneling magnetoresistance (TMR) ratio, thereby enhancing the efficiency and effectiveness of memory cells in various applications.

Career Highlights

Throughout his career, Goran has collaborated with leading technology companies, including Western Digital Technologies, Inc. and SanDisk Technologies Inc. His innovative research and development efforts have led to substantial advancements in memory technologies that serve a diverse range of industries.

Collaborations

Goran has partnered with several talented professionals throughout his career, notably Neil Smith and Petrus Antonius Van Der Heijden. These collaborations have allowed him to push the boundaries of magnetoresistive memory technology, combining their expertise and insights to create cutting-edge solutions.

Conclusion

Goran Mihajlovic stands out as a vital contributor to the field of memory technology, with his extensive patent portfolio reflecting his dedication to innovation. As technology evolves, his inventions play an essential role in shaping the future of data storage solutions. With his continued work, Goran is set to make even more significant strides in the realm of magnetoresistive memory devices.

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