The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Mar. 08, 2024
Sandisk Technologies Llc, Addison, TX (US);
Goran Mihajlovic, San Jose, CA (US);
Wonjoon Jung, San Jose, CA (US);
Sandisk Technologies, Inc., Milpitas, CA (US);
Abstract
A magnetoresistive memory cell includes a first electrode; a second electrode; and a layer stack located between the first electrode and the second electrode and comprising, from one end to another, a first reference layer, a first tunnel barrier layer, a free layer, a second tunnel barrier layer, and a second reference layer. A first one of the first reference layer and the second reference layer comprises a positive spin polarization material. A second one of the first reference layer and the second reference layer comprises a negative spin polarization material. A magnetization direction of the second reference layer is parallel to a magnetization direction of the first reference layer.