San Jose, CA, United States of America

Wonjoon Jung

This inventor holds 3 USPTO granted patents and 5 published patent applications. Top assignees: Western Digital Technologies, Inc., Sandisk Technologies Inc.. Active years: 2021-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wonjoon Jung. Retrieved from https://idiyas.com/inventor/wonjoon-jung-m8hu7hcn

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 3 

% Patents Active = 66.7

Average Co-Inventor Count = 2.4

ph-index = 2

Forward Citations = 6(Granted Patents)


Company Filing History:


Years Active: 2021-2026

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3 patents (USPTO):Explore Patents

Title: Innovations of Wonjoon Jung in Memory Device Technology

Introduction

Wonjoon Jung is a notable inventor based in San Jose, CA, who has made significant contributions to the field of memory device technology. He is currently associated with Western Digital Technologies, Inc., where he focuses on developing advanced memory solutions. With a total of 3 patents to his name, Jung's work is at the forefront of innovation in magnetoresistive memory devices.

Latest Patents

Jung's latest patents include groundbreaking technologies that enhance memory device performance. One of his patents is titled "Magnetoresistive memory device including a reference layer side dielectric spacer layer." This invention describes a memory device that features a first electrode, a second electrode, and a fixed vertical magnetization structure that generates a fixed vertical magnetic field. The design incorporates a layer stack containing a spacer dielectric layer and an additional reference layer made of ferromagnetic material, which is crucial for the device's functionality.

Another significant patent is "Magnetoresistive random access memory containing multilayer synthetic antiferromagnetic structure and method of making thereof." This patent outlines a magnetic memory device that utilizes a synthetic antiferromagnetic structure, which includes an antiferromagnetically coupled stack and a reference layer. The innovative design consists of multiple multilayer stacks, each containing ferromagnetic material layers and non-magnetic layers, enhancing the device's performance and reliability.

Career Highlights

Throughout his career, Wonjoon Jung has demonstrated a commitment to advancing memory technology. His work at Western Digital Technologies, Inc. has positioned him as a key player in the development of next-generation memory devices. His patents reflect a deep understanding of magnetoresistive technology and its applications in modern computing.

Collaborations

Jung collaborates with talented professionals in his field, including Michael Nicolas Albert Tran and Goran Mihajlovic. These collaborations foster an environment of innovation and creativity, leading to the development of cutting-edge memory solutions.

Conclusion

Wonjoon Jung's contributions to memory device technology through his patents and collaborations highlight his role as an influential inventor in the industry. His work continues to shape the future of memory solutions, making significant strides in enhancing device performance and reliability.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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