The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 19, 2021
Filed:
Oct. 23, 2019
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventors:
Wonjoon Jung, San Jose, CA (US);
Michael Nicolas Albert Tran, San Jose, CA (US);
Assignee:
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/16 (2006.01); H01L 43/08 (2006.01); H01L 27/22 (2006.01); H01L 43/10 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); H01L 27/222 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);
Abstract
A magnetic memory device contains a synthetic antiferromagnetic (SAF) structure that includes an antiferromagnetically coupled stack and a reference layer. The antiferromagnetically coupled stack contains plural multilayer stacks. Each multilayer stack contains at least one ferromagnetic material layer, a non-magnetic layer and a non-magnetic SAF spacer layer having a different composition than the non-magnetic layer.