The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 23, 2024
Filed:
Jul. 05, 2022
Western Digital Technologies, Inc., San Jose, CA (US);
Goran Mihajlovic, San Jose, CA (US);
Lei Wan, San Jose, CA (US);
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Abstract
A magnetoresistive memory cell includes a first electrode, a second electrode that is spaced from the first electrode, a magnetic tunnel junction layer stack located between the first electrode and the second electrode, the magnetic tunnel junction layer stack containing, from one side to another, a reference layer having a fixed reference magnetization direction, a tunnel barrier layer comprising a dielectric material, and a free layer, and an asymmetric magnetoresistance layer located between the magnetic tunnel junction layer stack and one of the first electrode and the second electrode.