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For the Inventor, By the Inventor

San Jose, CA, United States of America

Lei Wan

This inventor holds 30 USPTO granted patents and 18 published patent applications and 1 EPO patent, primarily in Magnetoresistive Memory. Top assignees: Sandisk Technologies Inc., Hgst Netherlands, B.v., Western Digital Technologies, Inc.. Active years: 2014-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Lei Wan. Retrieved from https://idiyas.com/inventor/lei-wan-a5sae17s

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 83.3

 

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 127(Granted Patents)


Company Filing History:

goldMedal11 out of 4,955 
 
Sandisk Technologies Inc.
 patents
silverMedal9 out of 987 
 
Hgst Netherlands, B.v.
 patents
bronzeMedal9 out of 5,429 
 
Western Digital Technologies, Inc.
 patents
4. 1 out of 4,238 
 
Wisconsin Alumni Research Foundation
 patents

Years Active: 2014-2026

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Areas of Expertise:
Magnetoresistive Memory
Cross-Point Arrays
Spin-Transfer Torque
Voltage Controlled Magnetic Anisotropy
Self-Assembly
Phase Change Memory
Nanoparticle Memory
Selector Elements
Memory Fabrication
Chemical Contrast Patterns
Directed Self-Assembly
Core-Shell Nanoparticles
30 patents (USPTO):Explore Patents
1. 12740068 - Cross-point magnetoresistive memory array containing selector rails and method of making the same (2026-09-15),
2. 12543508 - Cross-point magnetoresistive memory array containing selector rails and method of making the same (2026-02-03),
3. 12414307 - Cross-point magnetoresistive memory array including self-aligned dielectric spacers and method of making thereof (2025-09-09),
4. 12402324 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2025-08-26),
5. 12225828 - Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer (2025-02-11),
6. 12041787 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2024-07-16),
7. 12004357 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2024-06-04),
8. 12004356 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2024-06-04),
9. 11968907 - Magnetoresistive memory device including a magnetoresistance amplification layer (2024-04-23),
10. 11882706 - One selector one resistor MRAM crosspoint memory array fabrication methods (2024-01-23),
11. 11765911 - Method of making magnetoresistive memory cell over a selector pillar (2023-09-19),
12. 11631716 - Cross-point spin-transfer torque magnetoresistive memory array and method of making the same (2023-04-18),
13. 11271035 - Spin-orbit-torque magnetoresistive memory cell with integrated selector elements and method of making the same (2022-03-08),
14. 11152425 - Cross-point spin-transfer torque magnetoresistive memory array and method of making the same (2021-10-19),
15. 11056534 - One selector one resistor MRAM crosspoint memory array fabrication methods (2021-07-06),

Title: Lei Wan: Innovator in Memory Device Technology

Introduction: Lei Wan, based in San Jose, CA, is a prolific inventor with a remarkable portfolio of 26 patents. His innovative contributions primarily focus on advancing memory device technology, offering significant improvements in performance and capability.

Latest Patents: One of his noteworthy patents is for Voltage Controlled Magnetic Anisotropy (VCMA) memory devices, which features a unique design that includes a platinum-containing layer in contact with the free layer. This memory device comprises a first electrode, a second electrode, and a magnetic tunnel junction that enhances its functionality. Another recent patent focuses on a cross-point magnetoresistive random memory array and outlines a method of making it using self-aligned patterning. This innovative design incorporates a cross-point array of magnetoresistive memory cells, demonstrating advanced techniques in etching and structuring to improve memory storage capabilities.

Career Highlights: Lei Wan has made significant strides in the tech industry through his work with prominent companies. He has contributed to the development of advanced storage solutions at HGST Netherlands, B.V., and Western Digital Technologies, Inc., both leaders in the memory storage sector. His expertise in memory devices has directly influenced product innovations and market advancements.

Collaborations: Throughout his career, Lei has collaborated with industry experts, including his coworkers Ricardo Ruiz and Jordan Asher Katine. These partnerships have fostered an environment of innovation and have been instrumental in the successful completion of various projects, enhancing the advancements in memory technology.

Conclusion: Lei Wan’s extensive experience and innovative spirit in developing memory devices underscore his role as a significant contributor to the field. With a strong portfolio of patents that showcase advanced technology solutions, he continues to shape the future of memory devices, paving the way for continued advancements in digital storage solutions.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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