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Lei Wan

USPTO Granted Patents = 28 (Patent Applications = 15)

EPO Patents = 1 (Patent Applications = 1)

Average Co-Inventor Count = 2.9

ph-index = 6

Forward Citations = 114(Granted Patents)

Company Filing History:

9 out of 5,313

Western Digital Technologies, Inc.

patents

9 out of 987

Hgst Netherlands, B.v.

patents

9 out of 4,549

Sandisk Technologies Inc.

patents

4. 1 out of 4,125

Wisconsin Alumni Research Foundation

patents

Years Active: 2014-2025

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28 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12414307 - Cross-point magnetoresistive memory array including self-aligned dielectric spacers and method of making thereof (2025-09-09),

2. 12402324 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2025-08-26),

3. 12225828 - Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer (2025-02-11),

4. 12041787 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2024-07-16),

5. 12004357 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2024-06-04),

6. 12004356 - Cross-point magnetoresistive random memory array and method of making thereof using self-aligned patterning (2024-06-04),

7. 11968907 - Magnetoresistive memory device including a magnetoresistance amplification layer (2024-04-23),

8. 11882706 - One selector one resistor MRAM crosspoint memory array fabrication methods (2024-01-23),

9. 11765911 - Method of making magnetoresistive memory cell over a selector pillar (2023-09-19),

10. 11631716 - Cross-point spin-transfer torque magnetoresistive memory array and method of making the same (2023-04-18),

11. 11271035 - Spin-orbit-torque magnetoresistive memory cell with integrated selector elements and method of making the same (2022-03-08),

12. 11152425 - Cross-point spin-transfer torque magnetoresistive memory array and method of making the same (2021-10-19),

13. 11056534 - One selector one resistor MRAM crosspoint memory array fabrication methods (2021-07-06),

14. 10991879 - Multi-level phase change memory cells and method of making the same (2021-04-27),

15. 10490601 - Bottom pinned SOT-MRAM bit structure and method of fabrication (2019-11-26),

Title: Lei Wan: Innovator in Memory Device Technology

Introduction: Lei Wan, based in San Jose, CA, is a prolific inventor with a remarkable portfolio of 26 patents. His innovative contributions primarily focus on advancing memory device technology, offering significant improvements in performance and capability.

Latest Patents: One of his noteworthy patents is for Voltage Controlled Magnetic Anisotropy (VCMA) memory devices, which features a unique design that includes a platinum-containing layer in contact with the free layer. This memory device comprises a first electrode, a second electrode, and a magnetic tunnel junction that enhances its functionality. Another recent patent focuses on a cross-point magnetoresistive random memory array and outlines a method of making it using self-aligned patterning. This innovative design incorporates a cross-point array of magnetoresistive memory cells, demonstrating advanced techniques in etching and structuring to improve memory storage capabilities.

Career Highlights: Lei Wan has made significant strides in the tech industry through his work with prominent companies. He has contributed to the development of advanced storage solutions at HGST Netherlands, B.V., and Western Digital Technologies, Inc., both leaders in the memory storage sector. His expertise in memory devices has directly influenced product innovations and market advancements.

Collaborations: Throughout his career, Lei has collaborated with industry experts, including his coworkers Ricardo Ruiz and Jordan Asher Katine. These partnerships have fostered an environment of innovation and have been instrumental in the successful completion of various projects, enhancing the advancements in memory technology.

Conclusion: Lei Wan’s extensive experience and innovative spirit in developing memory devices underscore his role as a significant contributor to the field. With a strong portfolio of patents that showcase advanced technology solutions, he continues to shape the future of memory devices, paving the way for continued advancements in digital storage solutions.

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