The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 19, 2023
Filed:
Feb. 01, 2022
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventors:
Lei Wan, San Jose, CA (US);
Jordan Katine, Mountain View, CA (US);
Neil Robertson, Palo Alto, CA (US);
Assignee:
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/22 (2006.01); H01L 43/02 (2006.01); H10B 61/00 (2023.01); G11C 11/16 (2006.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01); H10N 50/10 (2023.01);
U.S. Cl.
CPC ...
H10B 61/10 (2023.02); G11C 11/161 (2013.01); G11C 11/1659 (2013.01); H10B 61/22 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02); G11C 11/1655 (2013.01); G11C 11/1657 (2013.01); G11C 11/1673 (2013.01); H10N 50/10 (2023.02);
Abstract
A spin-orbit-torque (SOT) magnetoresistive random access memory (MRAM) device includes a SOT MRAM cell containing a first two terminal selector element, a nonmagnetic metallic assist plate, and a magnetic tunnel junction located between the first two terminal selector element and the nonmagnetic metallic assist plate, and a circuit selection element selected from a transistor or a second two terminal selector element electrically connected to the nonmagnetic metallic assist plate of the SOT MRAM cell.