The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 30, 2019
Filed:
Jun. 09, 2017
Sandisk Technologies Llc, Plano, TX (US);
Goran Mihajlovic, San Jose, CA (US);
Jeffrey S. Lille, Sunnyvale, CA (US);
SanDisk Technologies LLC, Addison, TX (US);
Abstract
A four terminal magnetoresistive memory cell comprises a magnetic tunnel junction stack, a ferroelectric layer and a non-ferromagnetic spin polarization layer between the magnetic tunnel junction stack and the ferroelectric layer. The magnetic tunnel junction includes a first layer with fixed direction of magnetization, a free layer capable of changing direction of magnetization and an insulation layer between the first layer and the free layer. The non-ferromagnetic spin polarization layer is configured to generate perpendicular spin polarization in response to electrical current through the non-ferromagnetic spin polarization layer and a voltage received at the ferroelectric layer. The perpendicular spin polarization applies a torque on the free layer to change direction of magnetization of the free layer.