The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 28, 2020
Filed:
Dec. 12, 2018
Sandisk Technologies Llc, Addison, TX (US);
Goran Mihajlovic, San Jose, CA (US);
Oleksandr Mosendz, Campbell, CA (US);
SANDISK TECHNOLOGIES LLC, Addison, TX (US);
Abstract
A perpendicular spin orbit torque MRAM memory cell comprises a magnetic tunnel junction that includes a free layer in a plane, a ferromagnetic layer and a spacer layer between the ferromagnetic layer and the free layer. The free layer comprises a switchable direction of magnetization perpendicular to the plane. The ferromagnetic layer is configured to generate perpendicularly polarized spin current in response to an electrical current through the ferromagnetic layer and inject the perpendicularly polarized spin current through the spacer layer into the free layer to change the direction of magnetization of the free layer.