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For the Inventor, By the Inventor

San Jose, CA, United States of America

Alan Kalitsov

USPTO Granted Patents = 29 

Average Co-Inventor Count = 3.0

ph-index = 6

Forward Citations = 125(Granted Patents)


Location History:

  • Morgan Hill, CA (US) (2021)
  • San Jose, CA (US) (2018 - 2024)

Company Filing History:

goldMedal17 out of 5,310 
 
Western Digital Technologies, Inc.
 patents
silverMedal11 out of 4,519 
 
Sandisk Technologies Inc.
 patents
bronzeMedal1 out of 1 
 
California State University, Northridge
 patent

Years Active: 2018-2025

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29 patents (USPTO):
1. 12225828 - Voltage controlled magnetic anisotropy (VCMA) memory devices including platinum containing layer in contact with free layer (2025-02-11),
2. 12211535 - Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling (2025-01-28),
3. 12106790 - Magnetoresistive memory device and method of operating same using ferroelectric-controlled exchange coupling (2024-10-01),
4. 11889702 - Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same (2024-01-30),
5. 11887640 - Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same (2024-01-30),
6. 11871679 - Voltage-controlled magnetic anisotropy memory device including an anisotropy-enhancing dust layer and methods for forming the same (2024-01-09),
7. 11839162 - Magnetoresistive memory device including a plurality of reference layers (2023-12-05),
8. 11417379 - Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same (2022-08-16),
9. 11411170 - Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same (2022-08-09),
10. 11349066 - Magnetic tunnel junction memory devices employing resonant tunneling and methods of manufacturing the same (2022-05-31),
11. 11276446 - Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same (2022-03-15),
12. 11271009 - Ferroelectric memory devices employing conductivity modulation of a thin semiconductor material or a two-dimensional charge carrier gas and methods of operating the same (2022-03-08),
13. 11264562 - Multiferroic-assisted voltage controlled magnetic anisotropy memory device and methods of manufacturing the same (2022-03-01),
14. 11222920 - Magnetic device including multiferroic regions and methods of forming the same (2022-01-11),
15. 11200934 - Tunneling metamagnetic resistance memory device and methods of operating the same (2021-12-14),

Title: Alan Kalitsov: Pioneering Inventor from San Jose

Introduction: Alan Kalitsov is a renowned inventor based in San Jose, California, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Alan Kalitsov holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his commitment to pushing the boundaries of technological advancement.

Career Highlights: With a career spanning over two decades, Alan has worked with leading tech companies in Silicon Valley, playing a key role in developing cutting-edge technologies that have revolutionized various industries.

Collaborations: Throughout his career, Alan has collaborated with top researchers, engineers, and scientists, fostering a culture of innovation and creativity that has led to numerous successful projects and inventions.

Conclusion: Alan Kalitsov's passion for innovation and his relentless pursuit of excellence have solidified his reputation as a visionary inventor in the tech industry, inspiring the next generation of innovators to push the limits of what is possible.

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