The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 13, 2022
Filed:
Mar. 04, 2021
Western Digital Technologies, Inc., San Jose, CA (US);
Bhagwati Prasad, San Jose, CA (US);
Derek Stewart, Livermore, CA (US);
Matthew Carey, San Jose, CA (US);
Tiffany Santos, Palo Alto, CA (US);
WESTERN DIGITAL TECHNOLOGIES, INC., San Jose, CA (US);
Abstract
A magnetoresistive memory device includes a first electrode, a second electrode that is spaced from the first electrode, and a perpendicular magnetic tunnel junction layer stack located between the first electrode and the second electrode. The perpendicular magnetic tunnel junction layer stack includes, from one side to another: a reference layer having a fixed reference magnetization direction, a first spinel layer located including a first polycrystalline spinel material having () texture along an axial direction that is perpendicular to an interface with the reference layer, a magnesium oxide layer including a polycrystalline magnesium oxide material having () texture along the axial direction, a second spinel layer including a second polycrystalline spinel material having () texture along the axial direction, and a ferromagnetic free layer.