The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 13, 2026
Filed:
Jun. 29, 2023
Applicant:
Western Digital Technologies, Inc., San Jose, CA (US);
Inventors:
Rahul Sharangpani, Fremont, CA (US);
Raghuveer S. Makala, Campbell, CA (US);
Fei Zhou, San Jose, CA (US);
Assignee:
Sandisk Technologies, Inc., Milpitas, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H10B 43/27 (2023.01); G11C 16/04 (2006.01); H10B 43/10 (2023.01); H10B 43/35 (2023.01); H10W 20/41 (2026.01); H10W 20/42 (2026.01);
U.S. Cl.
CPC ...
H10B 43/27 (2023.02); G11C 16/0483 (2013.01); H10B 43/10 (2023.02); H10B 43/35 (2023.02); H10W 20/42 (2026.01); H10W 20/435 (2026.01);
Abstract
A semiconductor structure includes an alternating stack of insulating layers and electrically conductive layers, a memory opening vertically extending through the alternating stack, and a memory opening fill structure located in the memory opening and containing a memory film, a vertical semiconductor channel, and an aluminum nitride layer that laterally surrounds the memory film.
Sharangpani, Rahul. (2026). Memory device including aluminum nitride diffusion barrier layer and methods for forming the same (U.S. Patent No. 12764957). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/12764957
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile